Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

Cite This:ACS Nano2016101110516-10523

Publication Date:October 31, 2016

https://doi.org/10.1021/acsnano.6b06496

Henan Li，Peng Li，Jing-Kai Huang，Ming-Yang Li，Chih-Wen Yang，Yumeng Shi*，Xi-Xiang Zhang*，Lain-Jong Li*

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers.